Related papers: Spin torque gate magnetic field sensor
Magnetic skyrmions are topologically protected local magnetic solitons that are promising for storage, logic or general computing applications. In this work, we demonstrate that we can use a skyrmion device based on [W/CoFeB/MgO] 1 0…
Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
We present an optimal field-free protocol for current-induced switching of a perpendicularly magnetized ferromagnetic insulator nanoelement on the surface of a topological insulator. The time dependence of in-plane components of the surface…
Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…
We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…