Related papers: Fluorine-based color centers in diamond
Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in…
The coherence characteristics of a tin-vacancy color center in diamond are investigated through optical means including coherent population trapping between the ground state orbital levels and linewidth broadening effects. Due to the large…
We demonstrate electrical control of the single photon emission spectrum from chromium-based colour centres implanted in monolithic diamond. Under an external electric field the tunability range is typically three orders of magnitude larger…
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed…
We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with CF4 plasma and the surface chemistry is confirmed with x-ray…
The nitrogen-vacancy (NV) center in diamond exists in different charge states with distinct photoluminescence properties, which are sensitive to the nanoscale electrochemical environment. Hence, the NV charge state is emerging as a powerful…
As the ability to integrate single photon emitters into photonic architectures improves, so does the need to characterize and understand their interaction. Here, we use a scanning diamond nanocrystal to investigate the interplay between the…
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are…
Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
The paper by C. Bradac et al. [Nat. Commun. 8, 1205 (2017)] discusses room-temperature superradiance from NV color centers in diamonds. It presents a new model intended to reflect experimental characteristics of this phenomenon. To validate…
Characteristic photoluminescence (PL) of nanodiamonds (ND) of very different origin (detonation, HPHT, extracted from meteorite) was studied in situ at high temperatures in the range 20-450C. Luminescence was excited using 473 nm laser and…
As a point defect with unique spin and optical properties, nitrogen-vacancy (NV) center in diamond has attracted much attention in the fields of quantum sensing, quantum simulation, and quantum networks. The optical properties of an NV…
Irradiation of natural pink and brown diamond by middle-ultraviolet light (photon energy > 4.1 eV) is seen to induce anomalous fluorescence phenomena at N3 defect centres (structure N3-V). When diamonds primed in this fashion are…
We present a photoluminescence (PL) and Raman spectroscopy study of various diamond samples that have high concentrations of nitrogen-vacancy (NV) color centers up to multiple parts per million (ppm). With green red, and near infrared (NIR)…
Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and…
We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping.…
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the…
We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time,…
Color centers in diamond are important quantum emitters for a broad range of applications ranging from quantum sensing to quantum optics. Understanding the internal energy level structure is of fundamental importance for future…