A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2.
@article{arxiv.1608.07171,
title = {Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes},
author = {T. N. Tran Thi and B. Fernandez and D. Eon and E. Gheeraert and J. Hartwig and T. A. Lafford and A. Perrat-Mabilon and C. Peaucelle and P. Olivero and E. Bustarret},
journal= {arXiv preprint arXiv:1608.07171},
year = {2016}
}