Related papers: Improved Buildup Model for Radiation-Induced Defec…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex)…
We study the dependence of the formation energies of oxygen and metal induced defects in Ta2O5, TaO2, TaO, TiO2 and Ti4O7 on the chemical potential of electron and atomic constitutes. In the study of single defect, metal induced defects are…
A deep understanding of defects is essential for the optimisation of materials for solar energy conversion. This is particularly true for metal oxide photo(electro)catalysts, which typically feature high concentrations of charged point…
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy…
Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible…
We demonstrate that the observed increase of some nebular line ratios with height above the midplane in the diffuse ionized gas (DIG) in the Milky Way and other galaxies is a natural consequence of the progressive hardening of the radiation…
The Calibration enhancement effort for the Space Telescope Imaging Spectrograph (STIS) aims to improve data calibration via the application of physical modelling techniques. We describe here a model of the Charge Transfer process during…
We present simulations of initially stable isothermal clouds exposed to ionizing radiation from a discrete external source, and identify the conditions that lead to radiatively driven implosion and star formation. We use the Smoothed…
We study the breakdown of a Mott insulator with the thermodynamic imbalance induced by an applied bias voltage. By analyzing the instabilities of the magnetic susceptibility, we describe a rich non-equilibrium phase diagram, obtained for…
This paper presents a new defect model for the mixed mobile ion effect. The essential physical concept involved is that simultaneous migration of two unlike mobile ions in mixed ionic glass is accompanied by expansion or contraction of the…
When analysing HII regions, a possible source of systematic error on empirically derived physical quantities is the limited size of the slit used for the observations. A grid of photoionization models was built through the Aangaba code…
In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to…
Extensions have been made recently to the coronal approximation for the purpose of modelling line emission from carbon and oxygen in the lower solar atmosphere. The same modelling is used here for other elements routinely observed in the…
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is…
Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic…
Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…
High-energy ion irradiation deposits extreme energy in a narrow range (1-10 nm) along ion trajectories in solid through electronic energy loss, producing unique irradiation effects such as ion tracks. However, intrinsic velocity effects…
A network of optical parametric oscillators is used to simulate classical Ising and XY spin chains. The collective nonlinear dynamics of this network, driven by quantum noise rather than thermal fluctuations, seeks out the Ising / XY ground…