Related papers: Improved Buildup Model for Radiation-Induced Defec…
The fragmentation of star-forming interstellar clouds, and the resulting stellar initial mass function (IMF), is strongly affected by the temperature structure of the collapsing gas. Since radiation feedback from embedded stars can modify…
The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_\gamma$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain…
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show…
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the…
The emission line ratios [OIII]5007/H-beta and [NII]6584/H-alpha have been adopted as an empirical way to distinguish between the fundamentally different mechanisms of ionization in emission-line galaxies. However, detailed interpretation…
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…
An improved version of a recently developed stochastic cluster dynamics (SCD) method {[}Marian, J. and Bulatov, V. V., {\it J. Nucl. Mater.} \textbf{415} (2014) 84-95{]} is introduced as an alternative to rate theory (RT) methods for…
This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the…
We present a detailed study of star formation occurring in bound star--forming clouds under the influence of internal ionizing feedback from massive stars across a spectrum of cloud properties. We infer which objects are triggered by…
I present a briefly summary of the current status of inflationary models versus topological defects scenarios, as the mechanisms which could have induced the initial density perturbations, which left an imprint on the cosmic microwave…
Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis…
In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or thermal spikes) occur when energetic swift heavy ions…
As device sizes shrink and current densities increase, the probability of device failures due to gate oxide breakdown (OBD) also increases. To provide designs that are tolerant to such failures, we must investigate and understand the…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input stages. The dependence is found to generally exist in all…
Disorder-driven degradation phenomena, such as structural phase transformations and surface reconstructions, can significantly reduce the lifetime of Li-ion batteries, especially those with nickel-rich layered-oxide cathodes. We develop a…
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…
As inverter-based generation becomes more common in distribution networks, it is important to create models for use in optimization-based problems that accurately represent their non-linear behavior when saturated. This work presents models…
Radiation damage to space-based Charge-Coupled Device (CCD) detectors creates defects which result in an increasing Charge Transfer Inefficiency (CTI) that causes spurious image trailing. Most of the trailing can be corrected during…