Related papers: Analysis of low-threshold optically pumped III-nit…
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
We demonstrate three-dimensional (3-D) quenched narrow-line laser cooling and trapping of 40Ca. With 5 ms of cooling time we can transfer 28 % of the atoms from a magneto-optic trap based on the strong 423 nm cooling line to a trap based on…
Metallic-Cavity lasers or plasmonic nanolasers of sub-wavelength sizes have attracted great attentions in recent years, with the ultimate goal of achieving continuous wave (CW), room temperature (RT) operation under electrical injection.…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
We report on the observation of backward lasing at 391.4 nm of nitrogen ions pumped by linearly polarized intense femtosecond pulses at 800 nm. The strongly enhanced spectral intensity at 391.4 nm, as well as the amplification of an…
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within…
The authors show clear experimental evidence of lasing of exciton polaritons confined in L3 photonic crystal cavities. The samples are based on an InP membrane in air containing five InAsP quantum wells. Polariton lasing is observed with…
We demonstrate a photonic crystal nanolaser exhibiting an ultra-low threshold of 730 nA at telecom wavelengths. The laser can be directly modulated at 3 GHz at an energy cost of 1 fJ/bit. This is the lowest threshold reported for any laser…
A laser can be understood as thermodynamic engine converting heat to a coherent single mode field close to Carnot efficiency. From this perspective spectral shaping of the excitation light generates a higher effective temperature on the…
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet…
We present a quantum dynamic study on organic lasing phenomena, which is a challenging issue in organic optoelectronics. Previously, phenomenological method has achieved success in describing experimental observation. However, it cannot…
We investigate the feasibility of activating coherent mechanical oscillations in lasing microspheres by modulating the laser emission at a mechanical eigenfrequency. To this aim, 1.5% Nd3+:Barium-Titanium-Silicate microspheres with…
Generation of laser-like narrow bandwidth emissions from nitrogen molecular ions generated in intense near- and mid-infrared femtosecond laser fields has aroused much interest because of the mysterious physics underlying such a phenomenon…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum…
Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…
The pursuit of compact lasers with low-thresholds has imposed strict requirements on tight light confinements with minimized radiation losses. Bound states in the continuum (BICs) have been recently demonstrated as an effective mechanism to…