Related papers: Analysis of low-threshold optically pumped III-nit…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
Nanolasers have great potential as both on-chip light sources and optical barcoding particles. We demonstrate ultrasmall InGaP and InGaAsP disk lasers with diameters down to 360 nm (198 nm in height) in the red spectral range. Optically…
The generation of broadband squeezed states of light lies at the heart of high-speed continuous-variable quantum information. Traditionally, optical nonlinear interactions have been employed to produce quadrature-squeezed states. However,…
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is…
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…
We report on the fabrication of an ultrahigh quality factor, bottle-like microresonator from a microcapillary, and the realization of Raman lasing therein at pump wavelengths of $1.55~\mathrm{\mu m}$ and $780~\mathrm{nm}$. The dependence of…
We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots coupled to the evanescent wave of the high-$Q$ whispering gallery modes of a silica microsphere. In spite of high temperature and $Q$-spoiling of whispering…
Water window emission spectra of two laboratory nitrogen plasma sources were examined with a free standing grating spectrometer (FSGS). The highest line intensities at the wavelength 2.88 nm achievable with the sources were compared. Pulse…
We report on fabrication of whispering-gallery-mode microlasers in a Nd:glass chip by femtosecond laser three-dimensional (3D) micromachining. Main fabrication procedures include the fabrication of freestanding microdisks supported by thin…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…
The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal…
There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various…
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…
We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
Laser-cleaning of the electrodes in a planar micro-fabricated ion trap has been attempted using ns pulses from a tripled Nd:YAG laser at 355nm. The effect of the laser pulses at several energy density levels has been tested by measuring the…
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and…
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated…
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under…