English

Excitonic lasing in semiconductor quantum wires

Materials Science 2007-05-23 v1
Authors: L. Sirigu , D. Y. Oberli , L. Degiorgi , A. Rudra , E. Kapon
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Abstract

Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.

Keywords

excitons in semiconductors laser physics and fiber lasers electron emission

Cite

@article{arxiv.cond-mat/9912009,
  title  = {Excitonic lasing in semiconductor quantum wires},
  author = {L. Sirigu and D. Y. Oberli and L. Degiorgi and A. Rudra and E. Kapon},
  journal= {arXiv preprint arXiv:cond-mat/9912009},
  year   = {2007}
}

Comments

11 pages, 4 figures, submitted to Phys. Rev. B

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