Related papers: Understanding modes of negative differential resis…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density wave (CDW)…
Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon…
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's…
We consider magnetic flux moving in superconductors with periodic pinning arrays. We show that sample heating by moving vortices produces negative differential resistivity (NDR) of both N and S type (i.e., N- and S-shaped) in the…
Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…
Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte…
Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and…
Vanadium oxide (VOx) is a material of significant interest due to its metal-insulator transition (MIT) properties as well as its diverse stable antiferromagnetism depending on the valence states of V and O with distinct MIT transitions and…
Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the…
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation…
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides…
Negative differential resistivity (NDR) in a (3+1)-dimensional quantum system of strongly correlated charge carriers is theoretically reproduced by using the AdS/CFT correspondence. Our system is microscopically defined, and the analysis…