Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

Qingqing Ke; Amit Kumar; Xiaojie Lou; Kaiyang Zeng; John Wang

doi:10.1063/1.3668119

Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

Materials Science 2015-06-04 v1

Authors: Qingqing Ke , Amit Kumar , Xiaojie Lou , Kaiyang Zeng , John Wang

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Abstract

The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (VO..) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutralization of VO...

Keywords

negative differential resistance oxygen vacancies BiFeO3 thin film leakage current surface potential polarization

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@article{arxiv.1203.0458,
  title  = {Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film},
  author = {Qingqing Ke and Amit Kumar and Xiaojie Lou and Kaiyang Zeng and John Wang},
  journal= {arXiv preprint arXiv:1203.0458},
  year   = {2015}
}

Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

Abstract

Keywords

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