Related papers: Oxygen-vacancy-mediated Negative Differential Resi…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they…
Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (BLFM) thin film have been investigated by temperature-dependent impedance spectroscopy from 40 oC up to 200 oC. We found that hopping…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-{\delta} (EBTO3-{\delta}) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two…
We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is…
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to…
We have studied the polarization fatigue of La and Mg co-substituted BiFeO3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalous behavior is analyzed on the basis of the defect evolution…
The technological conditions of oxygen content variation in epitaxial La0.7Sr0.3MnO3-{\delta} films and the peculiarities of change of their transport characteristics were investigated. The films were grown onto single crystal SrTiO3…
Thin films of Pr0.7Ca 0.3MnO3, Nd-0.5Ca0.5MnO3 and Nd0.5Sr0.5MnO3 have been fabricated. by pulse laser deposition. Magnetic and electrical transport properties of these films were compared with their bulk solids. All the films grow in (101)…
A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport…
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…
Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance and cooling. These processes give rise…
The optical properties of Nd$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films have been studied from 5 meV to 25 meV and from 0.25 eV to 3 eV, at temperatures from 15 K to 300 K and magnetic fields up to 8.9 T. A large transfer of spectral weight from…
Non-linear conduction in a single crystal of charge-ordered Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ has been investigated in an applied magnetic field. In zero field, the non-linear conduction, which starts at T$<$T$_{CO}$ can give rise to a region…
A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie…
Just like the artefact found in ferroelectric hysteresis loops, the nearly identical NDR effect shown in Sr3Co2Fe24O41, TiO2, Al2O3, glass and even banana skins is confirmed to be a kind of water behavior. The combination of water induced…
We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…
Neodymium is a remarkable active component in numerous magnetic alloys that are used in various applications. However, the application of bare neodymium thin film is limited due to the lack of information about its electrical and magnetic…