Related papers: Engineering AlGaAs-on-insulator towards quantum op…
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…
Considerable efforts have been recently devoted to combining ultracold atoms and nanophotonic devices to obtain not only better scalability and figures of merit than in free-space implementations, but also new paradigms for atom-photon…
Overcoming the limitations of current nanofabrication techniques to achieve nanoscale feature sizes is essential for achieving new regimes of light-matter interactions at extreme frequencies and length scales. Here, we demonstrate a…
Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…
Optical parametric oscillators (OPOs) have been widely used for decades as tunable, narrow linewidth, and coherent light sources for reaching long wavelengths and are attractive for applications such as quantum random number generation and…
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…
Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
The ability to engineer nonlinear optical processes in all-dielectric nanostructures is both of fundamental interest and highly desirable for high-performance, robust, and miniaturized nonlinear optical devices. Herein, we propose a novel…
We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate in a single transverse mode with $<$3 dB/cm propagation…
The advent of dispersion-engineered and highly nonlinear nanophotonics is expected to open up an all-optical path towards the strong-interaction regime of quantum optics by combining high transverse field confinement with ultra-short-pulse…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response.…
Harnessing nonlinearities strong enough to allow two single photons to interact with one another is not only a fascinating challenge but is central to numerous advanced applications in quantum information science. Currently, all known…
A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic…
Dielectric metasurfaces have shown prominent applications in nonlinear optics due to strong field enhancement and low dissipation losses at the nanoscale. Chalcogenide glasses are one of the promising materials for the observation of…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…
The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes…
Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical…
Gallium arsenide (GaAs) is the widest used second generation semiconductor with a direct band gap and increasingly used as nanofilms. However, the magnetic properties of GaAs nanofilms have never been studied. Here we find by comprehensive…