Related papers: Engineering AlGaAs-on-insulator towards quantum op…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of…
The emergence of strong-field nanoplasmonics brings extreme laser field-matter interaction into the realm of nanoscale science, unveiling exciting new physics. Highly nonlinear interaction is enabled by tightly confined electric fields in…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
Nonlinear optics is of crucial importance in several fields of science and technology with applications in frequency conversion, entangled-photon generation, self-referencing of frequency combs, crystal characterization, sensing, and…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 {\mu}m) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon…
Coupling quantum emitters and nanostructures, in particular cold atoms and waveguides, has recently raised a large interest due to unprecedented possibilities of engineering light-matter interactions. However, the implementation of these…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
As the field of terahertz (THz) photonics advances, we present a monolithic gallium arsenide (GaAs) disk-shaped whispering gallery mode resonator that has potential as a component in THz nonlinear optics. GaAs is a material with significant…
Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative…
Graphene is the first truly two-dimensional (2D) material, possessing a cone-like energy spectrum near the Fermi energy and treated as a gapless semiconductor. Its unique properties trigger researchers to find more applications of it, such…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
Trapping and optically interfacing laser-cooled neutral atoms is an essential requirement for their use in advanced quantum technologies. Here we simultaneously realize both of these tasks with cesium atoms interacting with a multi-color…
Waveguide quantum electrodynamics offers a wide range of possibilities to effectively engineer interactions between artificial atoms via a one-dimensional open waveguide. While these interactions have been experimentally studied in the few…
Electrically tunable graphene plasmons are anticipated to enable strong light-matter interactions with resonant quantum emitters. However, plasmon resonances in graphene are typically limited to infrared frequencies, below those of optical…
Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…
Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like…
Optical amplifiers are fundamental to modern photonics, enabling long-distance communications, precision sensing, and quantum information processing. Erbium-doped amplifiers dominate telecommunications but are restricted to specific…