Related papers: Anderson localization effects on doped Hubbard mod…
We investigate the 1D Anderson-Hubbard model at half filling with box-disorder. The ground state phase diagram is obtained by means of real-space dynamical mean-field theory (R-DMFT) and the density matrix renormalization group (DMRG). We…
Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of…
The Anderson--Hubbard Hamiltonian at half--filling is investigated within dynamical mean--field theory at zero temperature. The local density of states is calculated by taking the geometric and arithmetic mean, respectively. The…
We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected…
The dualism between superconductivity and charge/spin modulations (the so-called stripes) dominates the phase diagram of many strongly-correlated systems. A prominent example is given by the Hubbard model, where these phases compete and…
We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…
We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…
The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…
Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…
We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…
We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…
We study the superconducting state of the hole-doped two-dimensional Hubbard model using Cellular Dynamical Mean Field Theory, with the Lanczos method as impurity solver. In the under-doped regime, we find a natural decomposition of the…
We develop an exact generalized Bogoliubov transformation for the spin 3/2 Hubbard model with large anti-Hunds rule coupling near half filling. Since our transformation is unitary, we can thereafter employ standard approximate mean field…
We study the Anderson disordered Hubbard model on the honeycomb lattice. The Hubbard term is han- dled with strong-coupling perturbation theory which encodes the Mott transition physics into a rich dynamical structure of a local…
The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2…
Many strongly correlated systems exhibit strange metallic behavior in certain parameter regimes characterized by anomalous transport properties that are irreconcilable with a Fermi-liquid-like description in terms of quasiparticles. The…
We have generalized the dynamical mean-field theory to study the doping dependence of the crossover from antiferromagnetic to short-range order modelled by an incommensurate spin density wave in the Hubbard model. The local selfenergy which…
A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…