Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$
Abstract
We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMnBi that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated -derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the -derived band dominate the transport properties and exhibit the Anderson localization, whereas other bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.
Keywords
Cite
@article{arxiv.2201.01000,
title = {Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$},
author = {Takuma Ogasawara and Kim-Khuong Huynh and Stephane Yu Matsushita and Motoi Kimata and Time Tahara and Takanori Kida and Masayuki Hagiwara and Denis Arčon and Katsumi Tanigaki},
journal= {arXiv preprint arXiv:2201.01000},
year = {2022}
}