Related papers: Anderson localization effects on doped Hubbard mod…
We investigate the properties of the frustrated underdoped Hubbard model on the square lattice using two complementary approaches, the dynamical cluster extension of dynamical mean field theory, and variational Monte Carlo simulations of…
We introduce a Cellular Dynamical Cluster Approximation (CDCA) to study the nature of the Mott insulator-metal transition in the extended Hubbard model on a square lattice. At strong coupling, a d-wave Mott insulator is obtained. Hole…
Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…
We study one-dimensional disordered fermions that either undergo metal-insulator transitions or topological phase transitions to become trivial Anderson insulators. We focus on using entanglement to elucidate how the spatial, momentum, and…
Using a three-frequency one-dimensional kicked rotor experimentally realized with a cold atomic gas, we study the transport properties at the critical point of the metal-insulator Anderson transition. We accurately measure the…
Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the Dynamical Mean Field Theory solution of a twofold-orbital degenerate Hubbard model with inverted Hund's rules on-site exchange,…
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…
We investigate the Hubbard model on the anisotropic triangular lattice as a suggested effective description of the Mott phase in various triangular organic compounds. Employing the variational cluster approximation and the ladder…
We investigate the effects of static, diagonal disorder in the $d=\infty$ Hubbard model by treating the dynamical effects of local Hubbard correlations and disorder on an equal footing. This is achieved by a proper combination of the…
Understanding doped Mott insulators is a fundamental goal in condensed matter physics, with relevance to cuprate superconductors and other quantum materials. The doped Hubbard model minimally describes such systems, and has explicated some…
The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…
We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from…
We investigate the paramagnetic periodic Anderson model using the dynamical mean-field theory in combination with the modified perturbation theory which interpolates between the weak and strong coupling limits. For the symmetric PAM, the…
The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…
The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…
Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…
The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory for the Anderson-Falicov-Kimball model with nearest-neighbors and next-nearest-neighbors hopping. The half-filled band is analyzed…
At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…
We examine the localization properties of the Anderson Hamiltonian with additional off-diagonal disorder using the transfer-matrix method and finite-size scaling. We compute the localization lengths and study the metal-insulator transition…
We study the role of electronic correlation in a disordered two-dimensional model by using a variational wave function that can interpolate between Anderson and Mott insulators. Within this approach, the Anderson-Mott transition can be…