Related papers: Versatile Filamentary Resistive Switching Model
Efficient operation of intelligent machines in the real world requires methods that allow them to understand and predict the uncertainties presented by the unstructured environments with good accuracy, scalability and generalization,…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
Memristive systems and devices are potentially available for implementing reservoir computing (RC) systems applied to pattern recognition. However, the computational ability of memristive RC systems depends on intertwined factors such as…
Neuromorphic computing has emerged as a promising avenue towards building the next generation of intelligent computing systems. It has been proposed that memristive devices, which exhibit history-dependent conductivity modulation, could…
The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing,…
Emerging electronic devices are promising to drive the performance of computer systems to new heights, against the notable saturation in traditional transistor-based architectures. Among them, resistive RAM -- or ReRAM -- has attracted a…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
Memristors are expected to form a major cornerstone in the upcoming renaissance of analog computing, owing to their very small spatial footprint and low power consumption. Due to the nature of their structure and operation, the response of…
An analog computer makes use of continuously changeable quantities of a system, such as its electrical, mechanical, or hydraulic properties, to solve a given problem. While these devices are usually computationally more powerful than their…
In this paper, we investigate few memristor-based analog circuits namely the phase shift oscillator, integrator, and differentiator which have been explored numerously using the traditional lumped components. We use LTspice-IV platform for…
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic…
We propose a method to build quantum memristors in quantum photonic platforms. We firstly design an effective beam splitter, which is tunable in real-time, by means of a Mach-Zehnder-type array with two equal 50:50 beam splitters and a…
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain…