Related papers: Universal Analytic Model of Irradiation Defect Dyn…
We have studied ionizing collisions in a BEC of He*. Measurements of the ion production rate combined with measurements of the density and number of atoms for the same sample allow us to estimate both the 2 and 3-body contributions to this…
It is shown for the first time, that room temperature Ultrasonic Defect Manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary Ion Mass Spectroscopy revealed that oxygen-…
Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature.…
The results of our researches of the influence of exponentially distributed surface centers on the effective surface recombination rate and the parameters of silicon solar cells (SCs) are reported. In our calculations, we assumed the…
This paper presents a novel approach for denoising Electron Backscatter Diffraction (EBSD) patterns using diffusion models. We propose a two-stage training process with a UNet-based architecture, incorporating an auxiliary regression head…
We investigate, in the probe limit, the negative refraction in the generalized superconductors with the Born-Infeld electrodynamics. We observe that the system has a negative Depine-Lakhtakia index in the superconducting phase at small…
Irradiation of cuprate high-$T_c$ superconductors with light ions of moderate energy creates point defects that lead to a reduction or full suppression of the critical temperature. By shaping the ion flux with a stencil mask, nanostructures…
The understanding and optimization of solar energy conversion and light emitting devices can greatly benefit from equivalent circuit models describing their response. However, a general model of electron-hole recombination in semiconductors…
Radiation damage is an unavoidable process when performing structural investigations of biological macromolecules with X-ray sources. In crystallography this process can be limited through damage distribution in a crystal, while for single…
Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the…
Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2,000 nm$^{3}$) along the implantation direction, the crystal damage is…
Predicting the dramatic changes in material properties caused by irradiation damage is key for the design of future nuclear fission and fusion reactors. Self-ion implantation is an attractive tool for mimicking the effects of neutron…
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences…
A transfer matrix scaling technique is developed for randomly diluted systems, and applied to the site-diluted Ising model on a square lattice in two dimensions. For each allowed disorder configuration between two adjacent columns, the…
Modeling of radiation-enhanced diffusion of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion…
Interdiffusion studies conducted in group IVB, VB and VIB metal-silicon systems are discussed in detail to show a pattern in the change of diffusion coefficients with the change in the atomic number of the refractory metal (M) component.…
We report time-resolved photoluminescence spectra of point defects in amorphous silicon dioxide (silica), in particular the decay kinetics of the emission signals of extrinsic Oxygen Deficient Centres of the second type from singlet and…
Channel state information (CSI)-based electromagnetic inverse scattering for material reconstruction in ISAC systems enables physics-grounded, material-aware DT. Yet the resulting CSI-induced scattering operator is often severely…
The scattering theory of the integrable statistical models can be generalized to the case of systems with extended lines of defect. This is done by adding the reflection and transmission amplitudes for the interactions with the line of…
We present a conditional diffusion model for electromagnetic inverse design that generates structured media geometries directly from target differential scattering cross-section profiles, bypassing expensive iterative optimization. Our 1D…