Related papers: Universal Analytic Model of Irradiation Defect Dyn…
This experimental PhD work deals with the generation and transformation processes of point defects induced by UV laser irradiation on amorphous silicon dioxide (silica). The investigation relies on several spectroscopic techniques used to…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels…
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…
The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…
The kinetics of E' centers (silicon dangling bonds) induced by 4.7eV pulsed laser irradiation in dry fused silica was investigated by in situ optical absorption spectroscopy. The stability of the defects, conditioned by reaction with mobile…
We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input stages. The dependence is found to generally exist in all…
A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on…
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the…
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is…
The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of…
Neutron and $\gamma$-ray irradiation damages to transistors are found to be non-additive, and this is denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The recent defect-based model [ACS Appl.…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
The conversion processes of Ge-related point defects triggered in amorphous SiO2 by 4.7eV laser exposure were investigated. Our study has focused on the interplay between the (=Ge•-H) H(II) center and the twofold coordinated Ge defect…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current…
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon…
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a…
We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR…
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect…