Related papers: Hysteretic magnetoresistance in nanowire devices d…
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been…
Four-terminal resistance measurements have been carried out on Zn nanowires formed using electron-beam lithography. When driven resistive by current, these wires re-enter the superconducting state upon application of small magnetic fields.…
We investigate proximity induced superconductivity in micrometer-long bismuth nanowires con- nected to superconducting electrodes with a high critical field. At low temperature we measure a supercurrent that persists in magnetic fields as…
Utilizing Corbino disc structures, we have examined the magnetic field response of resistivity for the surface states of SmB6 on different crystalline surfaces at low temperatures. Our results reveal a hysteretic behavior whose magnitude…
Magnetometry measurements in high quality LiFeAs single-crystals reveal a change in the sign of the magnetic hysteresis in the vicinity of the upper critical field $H_{c2}$, from a clear diamagnetic response dominated by the pinning of…
We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our…
Electronic transport and magnetization measurements were performed on La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-\delta}$ (LCMO/YBCO) bilayers below the superconducting transition temperature in order to study the interaction between…
We have performed magnetoresistance measurements on single-domain, submicron elliptical Ni particles using nonmagnetic probes in a four probe geometry at liquid helium temperatures. In the smallest particles, the magnetoresistance shows…
We demonstrate how the configuration and magnitude of a magnetic field, applied during magnetron sputtering of a NiFe/IrMn bilayer, influence the magnetic properties of the structure, such as hysteresis loop shape, coercivity, and exchange…
We study proximity-induced superconductivity in gold nanowires as a function of the length of the nanowire, magnetic field, and excitation current. Short nanowires exhibit a sharp superconducting transition, whereas long nanowires show…
We performed transmission spectroscopy experiments on coplanar half wavelength niobium resonators at a temperature T=4.2 K. We observe not only a strong dependence of the quality factor Q and the resonance frequency f_res on an externally…
The change in electrical resistance associated with the application of an external magnetic field is known as the magnetoresistance (MR). The measured MR is quite complex in the class of connected networks of single-domain ferromagnetic…
Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn$_3$Sn, a non-collinear antiferromanget with…
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…