We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of 0.5−1eVA˚ corresponding to a spin-orbit energy of 0.25−1meV. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.
@article{arxiv.1412.0877,
title = {Spin-orbit interaction in InSb nanowires},
author = {I. van Weperen and B. Tarasinski and D. Eeltink and V. S. Pribiag and S. R. Plissard and E. P. A. M. Bakkers and L. P. Kouwenhoven and M. Wimmer},
journal= {arXiv preprint arXiv:1412.0877},
year = {2015}
}
Comments
Version as accepted for publication as a Rapid in Phys. Rev. B