Related papers: Visualizing an adjustable WO3/p-GaN heterojunction
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…
The structural and electronic properties of new structural cubic (GaN)$_1$/(ZnO)$_1$ superlattice have been investigated using two different theoretical techniques: the full potential-linearized augmented plane wave (FP-LAPW) method and the…
Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at…
Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable…
Programmable photonic integrated circuits (PICs) offer a unique opportunity to create a flexible platform, akin to electronic field programmable gate array (FPGA). These photonic PGAs can implement versatile functionalities for applications…
The paper demonstrates that a two-dimensional ballistic nanodevice in which the electron gas satisfies either the Schroodinger equation (as in quantum wells in common semiconductor heterostructures) or the Dirac equation (as in graphene) is…
Superconducting thin-film electronics are attractive for their low power consumption, fast operating speeds, and ease of interface with cryogenic systems such as single-photon detector arrays, and quantum computing devices. However, the…
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI…
GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…
First-principles calculations reported here illuminate the effects of the interfacial properties of $\alpha$-Al$_{2}$O$_{3}$ and graphene, with emphasis on the structural and electronic properties. Various contact interfaces and different…
Photonic integrated circuits (PIC) currently rely on application-specific designs that are geared towards a particular functionality. Development of such application-specific PIC requires considerable effort and often involves several…
We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a…
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at ${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in…
Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical…
Future quantum computation and networks require scalable monolithic circuits, which incorporate various advanced functionalities on a single physical substrate. Although substantial progress for various applications has already been…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G…
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor…
Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…