Related papers: Electrostatic Engineering using Extreme Permittivi…
Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs.…
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at…
We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and…
The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…
We impose uniform electric fields both parallel and normal to 180^o ferroelectric domain walls in PbTiO_3 and obtain the equilibrium structures using the method of anharmonic lattice statics. In addition to Ti-centered and Pb-centered…
Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT)…
Recent research in ultrawide-bandgap (UWBG) semiconductors has focused on traditional materials such as Ga2O3, AlGaN, AlN, cubic BN, and diamond; however some materials exhibiting single perovskite structure have been known to yield…
Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 15 nm, and decreases slowly as d increases above 15 nm. This…
Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with…
In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative…
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite…
Total energies, electronic structure, surface energies, polarization, potentials and charge densities were studied for slabs of BaTiO_3 using the Linearized Augmented Plane Wave (LAPW) method. The depolarization field inhibits…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
The large discrepancy between experimental and theoretical remanent polarization and coercive field limits the applications of wide-band-gap ferroelectric materials. Here, using a machine-learning potential trained on ab-initio molecular…
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This…
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study…