Related papers: Improving thermal stability of MnN/CoFeB exchange …
Ni/Al reactive multilayers are promising materials for applications requiring controlled local energy release and superior mechanical performance. This study systematically investigates the impact of compositional variations, ranging from…
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…
In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we…
An impact of thin metallic ZrN layers on Si and sapphire wafers on substrate temperature during MBE growth of GaN nanowires is studied. Using nucleation kinetics of GaN as a sensitive probe we show that a thin ZrN layer strongly increases…
Internal friction in oxide thin films imposes a critical limitation to the sensitivity and stability of ultra-high finesse optical cavities for gravitational wave detectors. Strategies like doping or creating nanolaminates are sought to…
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to…
Neutron powder diffraction studies of the crystal and magnetic structures of the magnetocaloric compound Mn1.1Fe0.9(P0.8Ge0.2) have been carried out as a function of temperature, applied magnetic field, and pressure. The data reveal that…
Neutron diffraction studies as a function of temperature on solid solutions of MnSe and MnTe in the Se rich region are presented. Interestingly as Te is doped in MnSe, the structural transformation to NiAs phase diminishes, both in terms of…
In contrast to ordinary ferroelectrics where the temperature, Tm, of the permittivity maximum monotonically increases with bias field, E, in (1-x)PbMg1/3Nb2/3O3-(x)PbTiO3 (0<x<0.35) single crystals, Tm was found to remain constant or…
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 {\deg}C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain…
Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange…
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with…
Here, we report both ac and dc magnetization, thermodynamic and electric properties of hexagonal Ba$_3$NiIr$_2$O$_9$. The Ni$^{2+}$ (spin-1) forms layered triangular-lattice and interacts antiferromagnetically while Ir$^{5+}$ is believed to…
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…
We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the…
Magnetocaloric materials can be useful in magnetic refrigeration applications, but to be practical the magneto-refrigerant needs to have a very large magnetocaloric effect (MCE) near room temperature for modest applied fields (<2 Tesla)…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
The $\beta$-relaxation associated with the sub-glass transition temperature ($T_{\text{g},\beta}$) is attributed to fast, localised molecular motions which can occur below the primary glass transition temperature ($T_{g\alpha}$). Despite…