Related papers: BAlN for III-nitride UV light emitting diodes: und…
In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of…
Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-PEDOT-ITO LEDs with and without dye. We compare…
We present the method and observations for the measurement of the Extragalactic Background Light (EBL) utilizing the shadowing effect of a dark cloud. We measure the surface brightness difference between the opaque cloud core and its…
Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…
The electronic Raman response in the electron-doped cuprate superconductors is studied based on the $t$-$t'$-$J$ model. It is shown that although the domelike shape of the doping dependent peak energy in the $B_{2g}$ symmetry is a common…
The extragalactic background light (EBL), from ultraviolet to infrared wavelengths, is predominantly due to emission from stars, accreting black holes and reprocessed light due to Galactic dust. The EBL can be studied through the imprint it…
We described an approach to achieve fine color control of fluorescent White Organic Light-Emitting Diodes (OLED), based on an Ultra-thin Premixed emitting Layer (UPL). The UPL consists of a mixture of two dyes (red-emitting…
In this work we address the microscopic effects related to the implementation of a Bathophenanthroline (BPhen) exciton blocking layer (EBL) sandwiched between Ag cathode and molecular Diindenoperylene (DIP)/C60 bilayer of a photovoltaic…
Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd…
The effects of the electric-field-assisted annealing on the bulk heterojunction nano-morphology in the P3HT/PCBM active layer of the organic photovoltaic cells (OPVCs) are presented here. It was widely accepted that the…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
The study of the Extragalactic Background Light (EBL) is crucial to understand many astrophysical problems (as the formation of first stars, the evolution of galaxies and the role of dust emission). At present, one of the most powerful ways…
Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…
High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling…
In a project aimed at measuring the optical Extragalactic Background Light (EBL) we are using the shadow of a dark cloud.We have performed, with the ESO VLT/FORS, spectrophotometry of the surface brightness towards the…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with…
Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range.…
Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…