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The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs…
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
We study the effect of electron doping on the bonding character and stability of two-dimensional (2D) structures of elemental boron, called borophene, which is known to form many stable allotropes. Our {\em ab initio} calculations for the…
Successive ionic layer adsorption and reaction (SILAR) method is based on the adsorption and reaction of the ions in the cationic solution and the ionic solution, respectively. This method is simple, inexpensive, large-scale deposition,…
The extragalactic background light (EBL) from the far infrared through the visible and extending into the ultraviolet is thought to be dominated by starlight, either through direct emission or through absorption and reradiation by dust.…
Both the Energy Recovery Linac (ERL) and Free Electron laser (FEL) are considered to be candidates of the fourth generation light source. It is proposed to combine FEL into an ERL facility to integrate the advantages of both ERL and FEL,…
Neodymium nickelate, NdNiO3 attracts attraction due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron…
The extragalactic background light (EBL) is of fundamental importance both for understanding the entire process of galaxy evolution and for gamma-ray astronomy. However, the overall spectrum of the EBL between 0.1 and 1000 microns has never…
The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
Perovskite light-emitting diodes (PeLEDs) have recently attracted great research luminescence at room temperature in interest for their narrow emissions and solution processability. Remarkable progress has been achieved PeLEDs in recent…
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…
Laser manipulation plays a critical role in precisely tailoring relativistic electron beams through energy modulation, enabling the generation of coherent, intense, and ultrashort radiation in accelerator-based light sources such as…
We study the effects of an attractive interaction between the boron (B) and the nitrogen (N) atoms doped in a bilayer graphene (BLG), BC$_{14}$N, on the electronic, the thermal and the optical properties for two different types of a doping…
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the…
We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer asymmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are…
We investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO_4 plaquettes or CuO_6 octahedra. The undoped configuration implies here Cu 3d^9 and O 2p^6 formal valence states. The results of…
Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…
The extragalactic background light (EBL) is of fundamental importance both for understanding the entire process of galaxy evolution and for gamma-ray astronomy, but the overall spectrum of the EBL between 0.1-1000 microns has never been…