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The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…

Materials Science · Physics 2013-09-03 K. C. Yung , W. M. Wu , M. P. Pierpoint , F. V. Kusmartsev

Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical…

The design of Graph Transformers (GTs) generally neglects considerations for fairness, resulting in biased outcomes against certain sensitive subgroups. Since GTs encode graph information without relying on message-passing mechanisms,…

Machine Learning · Computer Science 2024-04-29 Renqiang Luo , Huafei Huang , Shuo Yu , Xiuzhen Zhang , Feng Xia

Modern microelectronic devices are composed of interfaces between a large number of materials, many of which are in amorphous or polycrystalline phases. Modeling such non-crystalline materials using first-principles methods such as density…

Materials Science · Physics 2023-10-12 Pratik Brahma , Krishnakumar Bhattaram , Sayeef Salahuddin

In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 G. Fiori , G. Iannaccone

Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge…

Mesoscale and Nanoscale Physics · Physics 2025-12-10 Nikolaos Mavredakis , Anibal Pacheco-Sanchez , David Jimenez

We study the application of graph random features (GRFs) - a recently introduced stochastic estimator of graph node kernels - to scalable Gaussian processes on discrete input spaces. We prove that (under mild assumptions) Bayesian inference…

Machine Learning · Computer Science 2025-09-29 Matthew Zhang , Jihao Andreas Lin , Krzysztof Choromanski , Adrian Weller , Richard E. Turner , Isaac Reid

We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 W. Fu , M. El Abbassi , T. Hasler , M. Jung , M. Steinacher , M. Calame , C. Schönenberger , G. Puebla-Hellmann , S. Hellmüller , T. Ihn , A. Wallraff

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Kausik Majumdar , Kota V. R. M. Murali , Navakanta Bhat , Fengnian Xia , Yu-Ming Lin

Transformers have become widely used in various tasks, such as natural language processing and machine vision. This paper proposes Gransformer, an algorithm based on Transformer for generating graphs. We modify the Transformer encoder to…

Machine Learning · Computer Science 2024-06-03 Ahmad Khajenezhad , Seyed Ali Osia , Mahmood Karimian , Hamid Beigy

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…

Applied Physics · Physics 2017-08-03 Yaohua Tan , Mirza M. Elahi , Han-Yu Tsao , K. M. Masum Habib , N. Scott Barker , Avik W. Ghosh

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Han Wang , Allen Hsu , Dong Seup Lee , Ki Kang Kim , Jing Kong , Tomas Palacios

A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…

Mesoscale and Nanoscale Physics · Physics 2013-07-17 Young I. Jhon , Myung S. Jhon

In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…

Materials Science · Physics 2024-12-20 Yash Pathak , Laxman Prasad Goswami , Bansi Dhar Malhotra , Rishu Chaujar

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is…

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…

Materials Science · Physics 2009-12-25 Fengnian Xia , Thomas Mueller , Yu-ming Lin , Alberto Valdes-Garcia , Phaedon Avouris

We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 V. L. Semenenko , V. G. Leiman , A. V. Arsenin , V. Mitin , M. Ryzhii , T. Otsuji , V. Ryzhii

The Fast Fourier Transform (FFT) is an algorithm of paramount importance in signal processing as it allows to apply the Fourier transform in O(n log n) instead of O(n 2) arithmetic operations. Graph Signal Processing (GSP) is a recent…

Numerical Analysis · Computer Science 2017-06-19 Luc Le Magoarou , Rémi Gribonval , Nicolas Tremblay
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