Related papers: Wurtzite InP Microdisks: from Epitaxy to Room-Temp…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
Flat optics has demonstrated great advances in miniaturizing conventional, bulky optical elements due to the recent developments in metasurface design. Specific applications of such designs include spatial differentiation and the…
Metasurfaces consisting of hybrid metal/dielectric nanostructures carry advantages of both material platforms. The hybrid structures can not only tightly confine subwavelength electromagnetic fields but also lower the absorption losses.…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
Directional photocurrents in two-dimensional materials arise from broken crystal symmetry, offering pathways to high-speed, bias-free photodetection beyond conventional devices. Tungsten ditelluride (WTe$_2$), a type-II Weyl semimetal,…
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction…
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…
Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…
Two-dimensional thermoelectric materials with a figure of merit $ZT$, which is greater than 2.0 at room temperature, would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion…
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode…
The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal…
We present a 3D-printing-based design to produce wire-guided liquid microfilms that can be used for versatile spectroscopic applications. We demonstrate the ability of our instrument to provide optically useful liquid microfilms with highly…
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and…
For over a decade, cold atoms in lattice potentials have been an attractive platform to simulate phenomena known from solid state theory, as the Mott-insulator transition. In contrast, the field of photonics usually deals with…
The exciting discovery of topological condensed matter systems has lately triggered a search for their photonic analogs, motivated by the possibility of robust backscattering-immune light transport. However, topological photonic phases have…
Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation…
Optically trapped nanospheres in high-vaccum experience little friction and hence are promising for ultra-sensitive force detection. Here we demonstrate measurement times exceeding $10^5$ seconds and zeptonewton force sensitivity with…
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity…