Monolithic quantum-dot distributed feedback laser array on silicon
Abstract
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.
Cite
@article{arxiv.1801.01052,
title = {Monolithic quantum-dot distributed feedback laser array on silicon},
author = {Yi Wang and Siming Chen and Ying Yu and Lidan Zhou and Lin Liu and Chunchuan Yang and Mengya Liao and Mingchu Tang and Zizhuo Liu and Jiang Wu and Wei Li and Ian Ross and Alwyn J. Seeds and Huiyun Liu and Siyuan Yu},
journal= {arXiv preprint arXiv:1801.01052},
year = {2018}
}