Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon
Abstract
Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic.
Cite
@article{arxiv.1501.03025,
title = {Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon},
author = {Zhechao Wang and Bin Tian and Marianna Pantouvaki and Weiming Guo and Philippe Absil and Joris Van Campenhout and Clement Merckling and Dries Van Thourhout},
journal= {arXiv preprint arXiv:1501.03025},
year = {2016}
}