Related papers: Silicon emissivity as a function of temperature

A silicon-tungsten (Si-W) sampling calorimeter, consisting of 19 alternate layers of silicon pad detectors (individual pad area of 1~cm$^2$) and tungsten absorbers (each of one radiation length), has been constructed for measurement of…

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling,…

The RESIK instrument on the CORONAS-F spacecraft obtained solar flare and active region X-ray spectra in four channels covering the wavelength range 3.8 -- 6.1 \AA in its operational period between 2001 and 2003. Several highly ionized…

Thermal radiation from an unpatterned object is similar to that of a gray body. The thermal emission is insensitive to polarization, shows only Lambertian angular dependence, and is well modeled as the product of the blackbody distribution…

Silicon trackers at the SLHC will suffer high radiation damage from particles produced during the collisions, which leads to high leakage currents. Reducing these currents in the sensors requires efficient cooling to -30 C. The large heat…

In this work, we investigated tensile and compression forces effect on the thermal conductivity of silicon. We used equilibrium molecular dynamics approach for the evaluation of thermal conductivity considering different interatomic…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

We present the design and commissioning of a cryogenic low-vibration test facility that measures displacement noise from a gram-scale silicon cantilever at the level of 10$^{-16}\, \mathrm{m/\sqrt{Hz}}$ at 1kHz. A volume of $\sim$36 litres…

Using molecular dynamics computer simulations we investigate how in silica the glass transition and the properties of the resulting glass depend on the cooling rate with which the sample is cooled. By coupling the system to a heat bath with…

A study on the radiative properties of two pure metals, copper and nickel, using a high accuracy radiometer is carried out. Their spectral emissivity between 3 and 21 {\mu}m and its dependence on emission angle and temperature between 250…

When heated, micro-resonators present a shift of their resonance frequencies. We study specifically silicon cantilevers heated locally by laser absorption, and evaluate theoretically and experimentally their temperature profile and its…

Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption,…

A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…

Context: The far-infrared (FIR) and sub-millimeter (submm) emissivity of the Milky Way (MW) cirrus is an important benchmark for dust grain models. Dust masses in other galaxies are generally derived from the FIR/submm using the emission…

We present an ab initio calculation of the DC conductivity of amorphous silicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation.…

Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative…

We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K…

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…

Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases,…