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Related papers: Silicon emissivity as a function of temperature

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By using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Jie Chen , Gang Zhang , Baowen Li

A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…

Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…

The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…

Strongly Correlated Electrons · Physics 2009-11-11 D. A. Knyazev , O. E. Omelyanovskii , A. S. Dormidontov , V. M. Pudalov

Resistance thermometry provides a time-tested method for taking temperature measurements that has been painstakingly developed over the last century. However, fundamental limits to resistance-based approaches along with a desire to reduce…

Optics · Physics 2018-01-09 Nikolai Klimov , Thomas Purdy , Zeeshan Ahmed

This paper describes a temperature sensitivity or thermal sag measurement of a geometric anti-spring based micro-electromechanical system (MEMS) gravimeter (Wee-g). The Wee-g MEMS gravimeter is currently fabricated on a (100) silicon wafer…

Porous materials provide a large surface to volume ratio, thereby providing a knob to alter fundamental properties in unprecedented ways. In thermal transport, porous nanomaterials can reduce thermal conductivity by not only enhancing…

High-reflectivity fused silica mirrors are at the epicentre of current advanced gravitational wave detectors. In these detectors, the mirrors interact with high power laser beams. As a result of finite absorption in the high reflectivity…

In interferometric cryogenic gravitational wave detectors, there are plans to cool mirrors and their suspension systems (payloads) in order to reduce thermal noise, that is, one of the fundamental noise sources. Because of the large payload…

General Relativity and Quantum Cosmology · Physics 2014-03-05 Y. Sakakibara , N. Kimura , T. Suzuki , K. Yamamoto , D. Chen , S. Koike , C. Tokoku , T. Uchiyama , M. Ohashi , K. Kuroda

Bodies in the outer Solar System may consist of, or be covered by, solid ammonia. Their temperature depends on its emissivity. We calculate that emissivity as a function of frequency, angle and polarization and convolve it with a Planck…

Earth and Planetary Astrophysics · Physics 2019-03-13 S. Wang , J. I. Katz

Recent observations made with Advanced LIGO and Advanced Virgo have initiated the era of gravitational-wave astronomy. The number of events detected by these "2nd Generation" (2G) ground-based observatories is partially limited by noise…

Instrumentation and Detectors · Physics 2021-09-01 Christoph Reinhardt , Alexander Franke , Jörn Schaffran , Roman Schnabel , Axel Lindner

Resistance thermometry is a time-tested method for taking temperature measurements. In recent years fundamental limits to resistance-based approaches spurred considerable interest in developing photonic temperature sensors as a viable…

Optics · Physics 2015-10-28 Nikolai N. Klimov , Sunil Mittal , Michaela Berger , Zeeshan Ahmed

We report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side,…

Strongly Correlated Electrons · Physics 2007-05-23 S. V. Kravchenko , T. M. Klapwijk

The thermo-electrical properties of a complex silicon cantilever structure used in thermal scanning probe lithography are modeled based on well established empirical laws for the thermal conductivity in silicon, the electrical conductivity…

Materials Science · Physics 2017-11-28 M. Spieser , C. Rawlings , E. Lörtscher , U. Duerig , A. W. Knoll

We designed, fabricated, and characterized the properties of a silicon-based vacuum window suitable for millimeter-wave astrophysical applications. The window, which has a diameter of 124 mm, optically active diameter of 68 mm, and…

Instrumentation and Methods for Astrophysics · Physics 2026-05-04 Ryota Takaku , Scott Cray , Kosuke Aizawa , Akira Endo , Shaul Hanany , Kenichi Karatsu , Jürgen Koch , Kuniaki Konishi , Tomotake Matsumura , Haruyuki Sakurai

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…

Materials Science · Physics 2012-02-06 Sufian Abedrabbo , Bashar Lahlouh , Sudhakar Shet , Anthony Fiory

Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence…

Applied Physics · Physics 2021-01-28 Nithin Chatterji , Aldrin Antony , Pradeep R. Nair

Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…

Applied Physics · Physics 2022-11-29 Yi Zhang , Yichi Zhang , Zhiliang Xu , Zhongxu Wang , Hon Wong , Zhebie Lu , Antonio Caruso

Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have…

Materials Science · Physics 2023-05-31 Eckhart Fretwurst , Robert Klanner , Joern Schwandt , Annika Vauth
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