Related papers: DNN-aided Read-voltage Threshold Optimization for …
This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future…
To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unknown during the readback process. This severely affects the…
Multiple reads of the same Flash memory cell with distinct word-line voltages provide enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized by maximizing the mutual information (MI) of the quantized…
A primary source of increased read time on NAND flash comes from the fact that in the presence of noise, the flash medium must be read several times using different read threshold voltages for the decoder to succeed. This paper proposes an…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…
Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without…
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
High-capacity NAND flash memories use multi-level cells (MLCs) to store multiple bits per cell and achieve high storage densities. Higher densities cause increased raw bit error rates (BERs), which demand powerful error correcting codes.…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…
This paper investigates the application of low-density parity-check (LDPC) codes to Flash memories. Multiple cell reads with distinct word-line voltages provide limited-precision soft information for the LDPC decoder. The values of the…
Data center networks (DCNs) require a low-cost, low-power optical transceiver to handle increased traffic from generative artificial intelligence, video streaming services, and more. Improving the required signal-to-noise ratio (RSNR) by…
Deep Neural Networks (DNNs) have emerged as the most effective programming paradigm for computer vision and natural language processing applications. With the rapid development of DNNs, efficient hardware architectures for deploying…
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When…
The memory physics induced unknown offset of the channel is a critical and difficult issue to be tackled for many non-volatile memories (NVMs). In this paper, we first propose novel neural network (NN) detectors by using the multilayer…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
Because deep neural networks (DNNs) rely on a large number of parameters and computations, their implementation in energy-constrained systems is challenging. In this paper, we investigate the solution of reducing the supply voltage of the…
Low-density parity-check (LDPC) codes have been successfully commercialized in communication systems due to their strong error correction capabilities and simple decoding process. However, the error-floor phenomenon of LDPC codes, in which…