Related papers: Enhancement of ferroelectric performance in PVDF:F…
In this study we show from first principles calculations the possibility to induce multiferroic and magnetoelectric functional properties in the Pnma NaMnF3 fluoroperovskite by means of epitaxial strain engineering. Surprisingly, we found a…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and…
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities…
Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…
Josephson tunnel junctions with the strong ferromagnetic alloy $\Fe_{0.75}\Co_{0.25}$ as the barrier material were studied. The junctions were prepared with high quality down to a thickness range of a few monolayers of Fe-Co. An oscillation…
Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully…
Multiferroic particulate composites have been fabricated by taking the morphotropic phase boundary composition of ferroelectric phase Bi(Ni1/2Ti1/2)O3-PbTiO3 and magnetic phase (Ni,Zn)Fe2O4. The ferroelectric phase has coexisting monoclinic…
We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their…
Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection of magnetic…
Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary…
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction…
To realize the creation of advanced multifunctional materials in energy storage and conversion technologies, the present research evaluates the structural, electronic, magnetic, thermodynamic, mechanical, thermoelectric, piezoelectric and…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed and stability in the presence of magnetic field. To fully use the merit, the device should be pure rather than hybrid with ferromagnet or ferrimagnet. For the…
Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic…
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching…