Related papers: Enhancement of ferroelectric performance in PVDF:F…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Economical solar energy conversion to electricity can be boosted by the discovery of fundamentally new photovoltaic mechanism, and a suitable system to realize it with commonly available materials like iron (Fe) and nickel (Ni). This paper…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…
It has been indicated that the path forward for the widespread usage of ferroelectric (FE) materials may be considerably facilitated through the reduction of programming voltages to on-chip logic compatible values of < 1 V. Obstacles…
Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantage of device miniaturization. Those based on current mechanisms still have restrictions…
Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with…