Related papers: Charge detection in an array of CMOS quantum dots
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background…
We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of…
We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the…
This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD…
Charged impurities in semiconductor quantum dots comprise one of the main obstacles to achieving scalable fabrication and manipulation of singlet-triplet spin qubits. We theoretically show that using dots that contain several electrons each…
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this…
The recent realization of coherent single-electron sources in ballistic conductors let us envision performing time-resolved electronic interferometry experiments analogous to quantum optics experiments.One could eventually use propagating…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies…
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated…
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local…
High-fidelity detection of charge transitions in quantum dots (QDs) is a key ingredient in solid state quantum computation. We demonstrate high-bandwidth radio-frequency charge detection in bilayer graphene quantum dots (QDs) using a…
The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…