Related papers: Charge detection in an array of CMOS quantum dots
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…
Understanding and suppressing sources of decoherence is a leading challenge in building practical quantum computers. In superconducting qubits, low frequency charge noise is a well-known decoherence mechanism that is effectively suppressed…
We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
The detection of individual charges plays a crucial role in fundamental material science and the advancement of classical and quantum high-performance technologies that operate with low noise. However, resolving charges at the lattice scale…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
We investigate experimentally the quantum coherence of an electronic two-level system in a double quantum dot under continuous charge detection. The charge-state of the two-level system is monitored by a capacitively coupled single quantum…
We analyzed the localized charge dynamics in the system of $N$ interacting single-level quantum dots (QDs) coupled to the continuous spectrum states in the presence of Coulomb interaction between electrons within the dots. Different dots…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We study coherent oscillations in double quantum dots tunnel-coupled to metallic leads by means of full counting statistics of electron transport. If two such systems are coupled by Coulomb interaction, there are in total six (instead of…
In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…