Related papers: Supersaturation model for InN PA-MOCVD
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to…
We demonstrate and interpret a technique of laser-induced formation of thin metallic films using alkali atoms on the window of a dense-vapour cell. We show that this intriguing photo-stimulated process originates from the adsorption of Cs…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction…
Originally developed technique based on generation of plasma-cluster flux emitted from cathode spots at surface of an integrally cold cathode has been applied for deposition of niobium superconductive (thick) film materials. Possibility for…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
Raman microscopy is one of the methods that could be used for future post-mortem analyses of samples extracted from ITER plasma facing. This study shows that this technique is useful for studying tungsten-based materials containing…
Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The…
Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron…
Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as…
In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source. Nominally single-phase, epitaxial films were…
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…
The growth of iron-containing nanostructures in the process of focused electron beam-induced deposition (FEBID) of Fe(CO)$_5$ is studied by means of atomistic irradiation-driven molecular dynamics (IDMD) simulations. The geometrical…
A model for ionization and recombination collisions in a multifluid plasma is formulated using the framework introduced in previous work [{Phys. Plasmas} \textbf{22}, 093512 (2015)]. The exchange source terms for density, momentum and…
A one-dimensional, dynamic, two-phase, isothermal model of proton exchange membrane fuel cell systems using a finite-difference approach has been developed. This model balances the simplicity of lumped-parameter models with the detailed…
Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In…
Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
We study how the substrate temperature influences the structural properties of carbon films deposited by PVD (physical vapor deposition) techniques. We adapted a heating system inside the deposition chamber, with temperatures up to…
Metallic nanostructures can support so-called plasma oscillations (plasmons). Plasmons allow for the concentration of the energy from light, down to sizes well below the conventional diffraction limit known from optics. Plasmonics thus…