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Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Sokratis Kalliakos , Vittorio Pellegrini , Cesar Pascual Garcia , Aron Pinczuk , Loren N. Pfeiffer , Ken. W. West

The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished by stacking layered materials into more complex van der Waals…

Energy states below the bandgap of a semiconductor, such as trap states or charge transfer states in organic donor acceptor blends, can contribute to light absorption. Due to their low number density or ultrasmall absorption cross-section,…

Applied Physics · Physics 2019-11-27 Christina Kaiser , Stefan Zeiske , Paul Meredith , Ardalan Armin

Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection…

CdTe-based thin film solar cell has been modeled and enumerated with a thin CuInTe2 (CIT) current booster layer. CdTe-based n-CdS/p-CdTe/p+-CIT/p++-WSe2 heterojunction device has been evaluated for the highest performance. It is revealed…

Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum…

A p-n junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband emission. Such thermoradiative cells have potential to harvest…

Materials Science · Physics 2016-11-16 Wei-Chun Hsu , Jonathan K. Tong , Bolin Liao , Yi Huang , Svetlana V. Boriskina , Gang Chen

The fundamental efficiency limit of a single bandgap solar cell is about 31% at one sun with a bandgap of about Eg = 1.35 eV (1), determined by the trade-off of maximising current with a smaller bandgap and voltage with a larger bandgap.…

Mesoscale and Nanoscale Physics · Physics 2016-06-17 C Rohr , P Abbott , I M Ballard , D B Bushnell , J P Connolly , N J Ekins- Daukes , K W J Barnham

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic…

Mesoscale and Nanoscale Physics · Physics 2012-12-17 Christos Trompoukis , Ounsi El Daif , Valérie Depauw , Ivan Gordon , Jef Poortmans

Here, we present a theoretical study in the context of photovoltaic (PV) and thermoelectric (TE) applications of ScAgC. The electronic, optical, and thermoelectric properties have been investigated systematically using density functional…

Materials Science · Physics 2025-03-05 Vinod Kumar Solet , Shamim Sk , Sudhir K. Pandey

The incoherence of sunlight has long been suspected to have an impact on solar cell energy conversion efficiency, although the extent of this is unclear. Existing computational methods used to optimize solar cell efficiency under incoherent…

Optics · Physics 2014-01-16 Aline Herman , Michael Sarrazin , Olivier Deparis

Thin films are preferred for high photocurrent conversion efficiency, but strong photon absorption at photon energies below the bandgap (near and shortwave infrared) typically requires thicker semiconductor layers. To address this tradeoff,…

Optics · Physics 2026-03-24 Mohammad Abutoama

In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface…

Materials Science · Physics 2017-08-25 Philippe Czaja , Massimo Celino , Simone Giusepponi , Michele Gusso , Urs Aeberhard

We employ a detailed balance approach to model a single-junction solar cell with a realistic narrow-band, non-unity-quantum-yield upconverter. As upconverter bandwidths are increased from 0 to 0.5 eV, maximum cell efficiencies increase from…

Optics · Physics 2013-09-23 Justin A. Briggs , Ashwin C. Atre , Jennifer A. Dionne

We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on…

In this paper, forward and backward propagating waves and reflectivity in an optical waveguide structure namely the fiber Bragg reflector also considered as a one dimensional photonic crystal, are analytically computed using coupled mode…

General Physics · Physics 2014-05-29 Sourangsu Banerji

We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…

Mesoscale and Nanoscale Physics · Physics 2017-03-07 M. O. Nestoklon , A. N. Poddubny , P. Voisin , K. Dohnalova

Multiphoton processes of absorption photoluminescence have enabled a wide range of applications including three-dimensional microfabrication, data storage, and biological imaging. While the applications of two-photon and three-photon…

We theoretically investigate the electronic and optical properties of semiconductor Cu3PSe4. We also report diffuse reflectance spectroscopy measurements for Cu3PSe4 and Cu3PS4, which indicate a band gap of 1.40 eV for the former.Hybrid…

Materials Science · Physics 2012-09-27 D. H. Foster , V. Jieratum , R. Kykyneshi , D. A. Keszler , G. Schneider
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