CdTe-based thin film solar cell has been modeled and enumerated with a thin CuInTe2 (CIT) current booster layer. CdTe-based n-CdS/p-CdTe/p+-CIT/p++-WSe2 heterojunction device has been evaluated for the highest performance. It is revealed that physical parameters such as thickness, doping, and defects of the CIT layer have a significant influence on the performance of the CdTe solar cell. The device shows an efficiency of 37.46% with an open circuit voltage, VOC of 1.102 V, short circuit current density, JSC of 38.50 mA/cm2, and fill factor, FF of 88.30%. The use of the photon recycling technique with a Bragg-reflector with 98% back and 95% front reflectance only provides an efficiency of ~44.3% with a current of 45.4 mA/cm2. These findings are very hopeful for the production of an efficient CdTe solar cells in the near future.
@article{arxiv.2308.00349,
title = {Highly efficient CdTe solar cell with a thin CIT current booster: theoretical insights},
author = {Md. Sabbir Hossain and Md. Alamin Hossain pappu and Bipanko Kumar Mondal and Ahnaf Tahmid Abir and Jaker Hossain},
journal= {arXiv preprint arXiv:2308.00349},
year = {2023}
}