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Related papers: Modeling epitaxial film growth of C$_{60}$ revisit…

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Thin film deposition on weakly interacting substrates exhibits a unique growth mode characterized by initially strong island formation and rapidly increasing roughness, which reaches a maximum and subsequently decreases as the film returns…

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…

Materials Science · Physics 2015-09-22 A. S. Bhattacharyya , S. Kumar , S. Jana , P. Y. Kommu , K. Gaurav , S. Prabha , V. S. Kujur , P. Bharadwaj

A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its…

Statistical Mechanics · Physics 2009-11-07 Anita Mehta , R. A. Cowley

We report results of the first computer simulation studies of a physically adsorbed gas on a quasicrystalline surface, Xe on decagonal Al-Ni-Co. The grand canonical Monte Carlo method is employed, using a semi-empirical gas-surface…

Materials Science · Physics 2009-11-11 Stefano Curtarolo , Wahyu Setyawan , Nicola Ferralis , Renee D. Diehl , Milton W. Cole

We report on the investigation of height distributions (HDs) and spatial covariances of two-dimensional surfaces obtained from extensive numerical simulations of the celebrated Clarke-Vvedensky (CV) model for homoepitaxial thin film growth.…

Statistical Mechanics · Physics 2020-04-29 I. S. S. Carrasco , T. J. Oliveira

Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special…

The mechanisms controlling the growth rate and composition of epitaxial CdTe and CdZnTe films were studied. The films were grown by isothermal closed space configuration technique. A GaAs 100 substrate was exposed sequentially to the…

Applied Physics · Physics 2019-10-09 E. M. Larramendi , O. de Melo , M. Hernández Vélez , M. C. Tamargo

Thin film growth is investigated in two types of lattice gas models where substrate and film particles are different, expressed by unequal interaction energy parameters. The first is of solid-on-solid type, whereas the second type…

Soft Condensed Matter · Physics 2021-02-17 Eelco Empting , Miriam Klopotek , Alexander Hinderhofer , Frank Schreiber , Martin Oettel

We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…

Materials Science · Physics 2012-11-02 A. Gocalinska , M. Manganaro , D. D. VVedensky , E. Pelucchi

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…

Materials Science · Physics 2016-02-23 H. Tetlow , J. Posthuma de Boer , I. J. Ford , D. D. Vvedensky , J. Coraux , L. Kantorovich

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth…

Materials Science · Physics 2012-06-27 V. Ongun Özçelik , S. Cahangirov , S. Ciraci

We perform mathematical anaysis of the biofilm development process. A model describing biomass growth is proposed: It arises from coupling three parabolic nonlinear equations: a biomass equation with degenerate and singular diffusion, a…

Analysis of PDEs · Mathematics 2017-03-14 Maria Gokieli , Nobuyuki Kenmochi , Marek Niezgódka

An off-lattice, continuous space Kinetic Monte Carlo (KMC) algorithm is discussed and applied in the investigation of strained heteroepitaxial crystal growth. As a starting point, we study a simplifying (1+1)-dimensional situation with…

Statistical Mechanics · Physics 2007-05-23 Michael Biehl , Florian Much , Christian Vey

Epitaxial growth methods are a key technology used in producing large-area thin films on substrates but as a result of various factors controlling growth processes the rational optimization of growth conditions is rather difficult.…

Statistical Mechanics · Physics 2019-09-26 Kazuhiko Seki

Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…

Compositionally complex solid solutions provide a unique route for engineering high-performance electrocatalysts, where the polyelemental surface composition can be seamlessly tuned to optimize activity, selectivity, and stability. However,…

Graphene, a flat monolayer of carbon atoms packed tightly into a two dimensional hexagonal lattice, has unusual electronic properties which have many promising nanoelectronic applications. Recent Low Energy Electron Microscopy (LEEM)…

Materials Science · Physics 2016-02-05 J H Lloyd-Williams

Graphite surfaces interact weakly with molecules compared to other conducting surfaces bringing the molecule-molecule interaction to the foreground. C$_{60}$ on highly oriented pyrolytic graphite is a model system for studying the molecular…

Mesoscale and Nanoscale Physics · Physics 2019-11-25 E. Seydel , R. Hoffmann-Vogel , M. Marz

We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Based on these investigations we propose two strategies to…

Statistical Mechanics · Physics 2009-10-31 S. Schinzer , M. Sokolowski , M. Biehl , W. Kinzel

Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic Monte Carlo (KMC) model is proposed that can replicate…

Materials Science · Physics 2015-05-27 Arvind Baskaran , Peter Smereka