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The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to…

Condensed Matter · Physics 2007-05-23 K. Malarz , A. Z. Maksymowicz

A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the…

Materials Science · Physics 2007-12-11 A. Zangwill , D. D. Vvedensky

An iterative algorithm based on Monte Carlo method is used to model thin film growth of AB type molecule and crystallization. Primarly, PVD technique is investigated since it is one of the most preferred on thin film growth processes. The…

Materials Science · Physics 2012-10-17 İzzet Paruğ Duru , Şahin Aktaş

Today the study of two-dimensional (2D) materials has become one of the key objectives of materials science. Unlike their three-dimensional counterparts, 2D materials can simultaneously demonstrate unique transport and mechanical properties…

Materials Science · Physics 2021-03-16 Arslan B. Mazitov , Artem R. Oganov

An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are…

Materials Science · Physics 2015-05-13 Arvind Baskaran , Jason Devita , Peter Smereka

We introduce a kinetic model for the growth of epitaxial graphene on 6H-SiC. The model applies to vicinal surfaces composed of half-unit-cell height steps where experiment shows that step flow sublimation of SiC promotes the formation and…

Mesoscale and Nanoscale Physics · Physics 2015-05-20 Fan Ming , Andrew Zangwill

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…

Condensed Matter · Physics 2007-05-23 K. Malarz

In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO2/Pt sandwich-like thin film system. The…

We present here a summary of some recent techniques used for atomistic studies of thin film growth and morphological evolution. Specific attention is given to a new kinetic Monte Carlo technique in which the usage of unique labeling schemes…

Materials Science · Physics 2009-11-11 Talat S. Rahman , Chandana Ghosh , Oleg Trushin , Abdelkader Kara , Altaf Karim

Several bacteria and bacteria strands form biofilms in different environmental conditions, e.g. pH, temperature, nutrients, etc. Biofilm growth, therefore, is an extremely robust process. Because of this, while biofilm growth is a complex…

Kinetic Monte-Carlo (KMC) simulations are a well-established numerical tool to investigate the time-dependent surface morphology in molecular beam epitaxy (MBE) experiments. In parallel, simplified approaches such as limited mobility (LM)…

Computational Physics · Physics 2019-09-18 Thomas Martynec , Sabine H. L. Klapp

In this paper a simple (2+1) solid-on-solid model of the epitaxial films growth based on random deposition followed by breaking particle-particle lateral bonds and particles surface diffusion is introduced. The influence of the critical…

Materials Science · Physics 2007-05-23 R. Kosturek , K. Malarz

We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces…

Materials Science · Physics 2007-05-23 Martin Ahr

We investigate the stress-driven morphological instability of epitaxially growing multilayer films, which are coherent and dislocation-free. We construct a direct elastic analysis, from which we determine the elastic state of the system…

Statistical Mechanics · Physics 2009-11-07 Zhi-Feng Huang , Rashmi C. Desai

The Kinetic Monte Carlo (KMC) method has become an important tool for examination of phenomena like surface diffusion and thin film growth because of its ability to carry out simulations for time scales that are relevant to experiments. But…

Materials Science · Physics 2007-05-23 Talat S. Rahman , Abdelkader Kara , Altaf Karim , Oleg Trushin

Thin films are ubiquitous, with uses ranging from optoelectronics to antibacterial coatings. Unfortunately, precisely quantifying how the choice of substrate influences epitaxial growth remains an unsolved problem. Here, a novel thin film…

Materials Science · Physics 2021-01-26 Kai Trepka

The growth rates and chemical ordering of ferroelectric alloys are studied with kinetic Monte Carlo (KMC) simulations using an electrostatic model with long-range Coulomb interactions, as a function of temperature, chemical composition, and…

Materials Science · Physics 2016-08-31 Malliga Suewattana , Henry Krakauer , Shiwei Zhang

We determine the critical layer thickness for the appearance of misfit dislocations as a function of the misfit between the lattice constants of the substrate and the adsorbate from Kinetic Monte Carlo (KMC) simulations of heteroepitaxial…

Materials Science · Physics 2016-08-31 F. Much , M. Ahr , M. Biehl , W. Kinzel

Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ were grown on as-received and treated NdGaO$_{3}$ substrates by fine tuning of…

Materials Science · Physics 2011-09-16 Hyoungjeen Jeen , Rafiya Javed , Amlan Biswas

The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using a…

Statistical Mechanics · Physics 2015-03-13 F. F. Leal , S. C. Ferreira , S. O. Ferreira