Related papers: Cryogenic Characterization of 180 nm CMOS Technolo…

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18{\mu}m standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices…

This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2…

Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…

Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has…

This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The…

This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperature (4.2 K). The variations in capacitance, inductance and…

On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…

This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and…

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a…

In the pursuit of quantum computing, solid-state quantum systems, particularly superconducting ones, have made remarkable advancements over the past two decades. However, achieving fault-tolerant quantum computing for next-generation…

We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…

This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…

The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold…

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to…

The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current…