Related papers: Mesoscopic Elastic Distortions in GaAs Quantum Dot…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the $[001]$ or $[110]$ crystal directions. We conduct simultaneous measurements of the spectral shifts in the…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape…
Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Land\'e $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value…
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…
The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here,…
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain…
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a…
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The…
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes…
Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial…
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively…
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed…