Related papers: Transport mechanism in amorphous molybdenum silici…
We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with…
Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower…
The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed,…
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…
Mott variable-range hopping is a fundamental mechanism for electron transport in disordered solids in the regime of strong Anderson localization. We give a brief description of this mechanism, recall some results concerning the behavior of…
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit…
Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…
We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…
Thermal transport in solids changes its nature from phonon propagation that suffers from perturbative scattering to thermally activated hops between localized vibrational modes as the level of disorder increases. Models have been proposed…
Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…
The charge carrier transport in metal phthallocyanine based disordered thin films has been investigated. Charge carrier mobility in these disordered thin films strongly depends on the electric field and temperature due to hopping…
We investigate the semiclassical electronic transport properties of the bilayer silicene-like system in the presence of charged impurity. The trigonal warping due to the interlayer hopping, and its effect to the band structure of bilayer…
High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior…
Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of…
The morphological, transport and terahertz optical properties of DC magnetron sputtered granular molybdenum thin-films with nano-grains embedded in an amorphous matrix have been studied in the normal and superconducting states. The…
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic…
The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…