Related papers: Proximity-induced magnetization in graphene: Towar…
We have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at…
Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer…
The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At…
Electronic analogue of generalized Goos-H\"{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam…
We investigate the spin-dependent transport properties of a ferromagnetic/strained/normal graphene junctions with central region subjected to a magnetic field $B$. An analytical approach, based on Dirac equation, is implemented to obtain…
We demonstrate theoretically the electric tunability due to coalescence of exceptional points in PT-symmetric waveguides bounded by imperfect conductive layers. Owing to the competition effect of multimode interaction, multiple exceptional…
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…
We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…
Graphene is famous for being a host of 2D Dirac fermions. However, spin-orbit coupling introduces a small gap, so that graphene is formally a quantum spin hall insulator. Here we present symmetry-protected 2D Dirac semimetals, which feature…
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…
We investigated the electronic structure, Fermi surface topology and the emergence of valley imbalance in rhombohedral trilayer graphene (RTG) induced by the topological proximity and the electric fields. We show that, a strong proximity…
Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a…
The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic…
The electronic structure of a graphene superlattice composed by two periodic regions with different Fermi velocity, energy gap and electrostatic potential is investigated by using an effective Dirac-like Hamiltonian. It must be expected…
We propose a generalized Dirac fermion description for the electronic state of graphene terminated by a zigzag edge. This description admits a spin-orbit coupling needed to preserve time-reversal invariance of the zigzag confinement,…
We discuss electric transport and orbital magnetism of multilayer graphenes in a weak-magnetic field using the matrix decomposition technique. At zero temperature, the minimum conductivity is given by that of the monolayer system multiplied…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the…
The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of…
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant…