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Related papers: Anomalous Hall Effect in Bismuth

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We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected…

Mesoscale and Nanoscale Physics · Physics 2026-05-04 Oulin Yu , F. Boivin , A. Silberztein , G. Gervais

The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…

We report anomalous Hall effect (AHE) in single crystals of quasi-two-dimensional Fe$_{3-x}$GeTe$_2$ ($x \approx 0.36$) ferromagnet grown by the flux method which induces defects on Fe site and bad metallic resistivity. Fe K-edge x-ray…

Strongly Correlated Electrons · Physics 2018-04-18 Yu Liu , Eli Stavitski , Klaus Attenkofer , C. Petrovic

In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…

Mesoscale and Nanoscale Physics · Physics 2023-02-21 Jiaji Zhao , Bingyan Jiang , Jinying Yang , Lujunyu Wang , Hengjie Shi , Guang Tian , Zhilin Li , Enke Liu , Xiaosong Wu

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…

The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…

We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. A. Burkov , Leon Balents

Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…

Mesoscale and Nanoscale Physics · Physics 2023-04-27 Jin Cao , Wei Jiang , Xiao-Ping Li , Daifeng Tu , Jiadong Zhou , Jianhui Zhou , Yugui Yao

It is rarely reported that collinear antiferromagnetic (AFM) metals can have anomalous Hall effect (AHE). In this letter, based on symmetry analysis and the first-principles electronic structure calculations, we predict that two existing…

Materials Science · Physics 2024-03-20 Xiao-Yao Hou , Huan-Cheng Yang , Zheng-Xin Liu , Peng-Jie Guo , Zhong-Yi Lu

The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…

A unified theory of the anomalous Hall effect (AHE) is presented for multi-band ferromagnetic metallic systems with dilute impurities. In the clean limit, the AHE is mostly due to the extrinsic skew-scattering. When the Fermi level is…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Shigeki Onoda , Naoyuki Sugimoto , Naoto Nagaosa

Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…

Materials Science · Physics 2009-10-28 Shengqiang Zhou , Danilo Buerger , Manfred Helm , Heidemarie Schmidt

An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…

The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…

Materials Science · Physics 2025-12-19 Longju Yu , Hong Jian Zhao , Yurong Yang , Laurent Bellaiche , Yanming Ma

The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for…

Strongly Correlated Electrons · Physics 2016-07-05 Naoki Kiyohara , Takahiro Tomita , Satoru Nakatsuji

The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…

Materials Science · Physics 2019-05-06 Jisoo Moon , Jinwoong Kim , Nikesh Koirala , Maryam Salehi , David Vanderbilt , Seongshik Oh

To elucidate the origin of anomalous Hall effect (AHE) in ferromagnetic transition metals, we study the intrinsic AHE based on a multi-orbital (xz,yz)-tight-binding model. We find that a large anomalous velocity comes from the off-diagonal…

Strongly Correlated Electrons · Physics 2009-11-13 H. Kontani , T. Tanaka , K. Yamada

Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…

Materials Science · Physics 2009-11-13 Kazunori Ueno , Tomoteru Fukumura , Hidemi Toyosaki , Masaki Nakano , Masashi Kawasaki

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…

Materials Science · Physics 2020-02-27 N. Lebedev , M. Stehno , A. Rana , P. Reith , N. Gauquelin , J. Verbeeck , H. Hilgenkamp , A. Brinkman , J. Aarts
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