Related papers: Plasmonic FET Terahertz Spectrometer
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors…
The 1-10 terahertz (THz) spectral window is emerging as a key region for plenty of applications, requiring not yet available continuous-wave room-temperature THz spectrometers with high spectral purity and ultra-broad tunability. In this…
We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…
Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…
The terahertz (THz) spectral domain offers a myriad of applications spanning chemical spectroscopy, medicine, security and imaging[1]. It has also recently become a playground for fundamental studies of light-matter interactions [2-6]. THz…
We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
We study transmission of the terahertz radiation through a two-dimensional electron gas with a concentration controlled by grating gate electrodes. Voltage applied to these electrodes creates a lateral plasmonic crystal with a gate-tunable…
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current)…
An electrically tunable terahertz (THz) plasmonic device is designed and fabricated using liquid metals (eutectic gallium indium EGaIn) and shape memory alloy wires (Flexinol). The liquid metal is injected into the voids of a poly(dimethyl)…
We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex…
A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the…
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device…
Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the…
The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been…
Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz…