Related papers: Plasmonic FET Terahertz Spectrometer

Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is…

We study the selective excitation at infrared and THz frequencies of optical and acoustic plasmonic modes supported by thin topological insulators. These modes are characterized by effective net charge or net spin density, respectively, and…

We propose a terahertz radiation source based on the excitation of plasma resonances in graphene structures by means of mixing two NIR laser signals with a THz difference frequency. The process is the photo-thermo-electric effect which has…

We show in theory and experiment that in periodically patterned spintronic THz emitters (STE), charge dynamics can modify the emission spectrum in a well-controlled way. Characterization of sub-wavelength patterned STE at frequencies up to…

We have measured coherent terahertz emission spectra from Bi2Sr2CaCu2O8+\delta\ mesa devices, as a function of temperature and mesa bias voltage. The emission frequency is found to be tunable by up to 12% by varying the temperature and bias…

Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding…

A common approach to detecting weak signals or minute quantities involves leveraging the localized spectral features of resonant modes, whose sharper lines (i.e. high Q-factors) enhance transduction sensitivity. However, maximizing the…

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…

Plasmonic metasurfaces are able to modify the wavefront by altering the light intensity, phase and polarization state. Active plasmonic metasurfaces would allow dynamic modulation of the wavefront which give rise to interesting application…

Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V…

Collective excitations such as magnons and polar phonons provide natural access to the terahertz (THz) regime, but efficient generation and tunability remain elusive. Multiferroic BiFeO3 combines both orders at room temperature, offering a…

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…

We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of…

We describe the design and measurement of feedhorn-coupled, transition-edge sensor (TES) polarimeters with two passbands centered at 220 GHz and 280 GHz, intended for observations of the cosmic microwave background. Each pixel couples…

A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V…

The influence of temperature is a major problem in Structural Health Monitoring diagnosis using guided waves. In this article, two methods for temperature compensation are used to evaluate the temperature of a structure monitored by…

Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the…

Terahertz and sub-terahertz band detection has a key role both in fundamental interactions physics and technological applications, such as medical imaging, industrial quality control and homeland security. In particular, transition edge…