Related papers: Single-charge occupation in ambipolar quantum dots
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We…
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…
We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between…
We consider a double dot system of equivalent, capacitively coupled semiconducting quantum dots, each coupled to its own lead, in a regime where there are two electrons on the double dot. Employing the numerical renormalization group, we…
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
Interactions between nanoscale semiconductor structures form the basis for charge detectors in the solid state. Recent experimental advances have demonstrated the on-chip detection of single electron transport through a quantum dot (QD).…
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile,…
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the…
Low-capacitance Josephson junction systems as well as coupled quantum dots, in a parameter range where single charges can be controlled, provide physical realizations of quantum bits, discussed in connection with quantum computing. The…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
We propose a sensitive new detector based on Cooper pair breaking in a superconductor. The quantum capacitor detector (QCD) exploits the extraordinary sensitivity of superconducting single-electron devices to the presence of quasiparticles…